Accession Number : AD0611146

Title :   STUDY OF THE OPTICAL PROPERTIES OF HIGHLY DOPED AND DEGENERATE SILICON,

Corporate Author : ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s) : Balkanski,M.

Report Date : 15 OCT 1963

Pagination or Media Count : 18

Abstract : An investigation was made of the free carrier absorption, the absorption peak at 2.3 microns, and the energy shift of the fundamental absorption edge. The 2.3 microns peak was attributed to intraband transition. (Author)

Descriptors :   (*SILICON, CRYSTALS), (*ABSORPTION SPECTRA, SILICON), IMPURITIES, FRANCE, OPTICAL PROPERTIES, POLARIZATION, PHONONS, INFRARED SPECTROSCOPY, SCATTERING

Distribution Statement : APPROVED FOR PUBLIC RELEASE