Accession Number : AD0611147
Title : PRESSURE DEPENDENCE OF THE ELECTRICAL AND OPTICAL PROPERTIES OF SEMICONDUCTORS.
Descriptive Note : Progress rept. no. 32.
Corporate Author : HARVARD UNIV CAMBRIDGE MASS DIV OF ENGINEERING AND APPLIED PHYSICS
Report Date : AUG 1964
Pagination or Media Count : 20
Abstract : Topics include: optical and electrical properties of lead salts under pressure; electrical properties of gray tin as a function of pressure and band structure studies of HgSe and HgTe; effect of pressure on the properties of intermetallic crystals; spin resonance measurements on semiconductors; investigation of the properties of the transition metal oxides; construction and application of a new ratio type spectrometer for the measurement of small increments in absorption coefficients; investigation of the semiconducting properties of forsterite; investigation of the Faraday rotation in semiconductors; investigation of the optical properties of Ge, PbS, CdTe, and HgTe thin films; the effect of pressure on the spontaneous and stimulated radiative recombination spectrum of intermetallic compounds.
Descriptors : (*SEMICONDUCTORS, PRESSURE), OPTICAL PROPERTIES, ELECTRICAL PROPERTIES, LEAD COMPOUNDS, SALTS, TIN, MERCURY COMPOUNDS, TELLURIDES, SELENIDES, BAND SPECTRA, INTERMETALLIC COMPOUNDS, NUCLEAR SPINS, NUCLEAR RESONANCE, TRANSITION METALS, OXIDES, MAGNESIUM COMPOUNDS, SILICATES, MAGNETOOPTICS, SEMICONDUCTING FILMS, GERMANIUM, SULFIDES, CADMIUM COMPOUNDS, ABSORPTION SPECTRA
Distribution Statement : APPROVED FOR PUBLIC RELEASE