Accession Number : AD0611166

Title :   LOW VOLTAGE DC LUMINESCENCE.

Descriptive Note : Final rept., for 26 Mar 63-25 Mar 64,

Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y

Personal Author(s) : Summergrad,R. N. ; Wasserman,M. S.

Report Date : DEC 1964

Pagination or Media Count : 44

Abstract : A study of injection electroluminescence in p-n junctions was chosen as the most promising approach to the development of a high brightness, high-efficiency low-voltage dc injection electroluminescent light source for display device applications. The compounds GaP, AlAs, AlP, and solid solutions of them and with GaAs, were selected for study, based upon considerations of forbidden energy bandgap and a carrier mobility. Important results are the preparation of polycrystalline AlAs of relatively high purity and the use of this material to prepare single crystal epitaxial layers whose major constituent is AlAs. Epitaxial growth of AlAs layers requires temperatures above 1100C. These temperatures were obtained without introducing interference from competing reactions with the container by adapting a close-spacing procedure in which the source material and the substrate are separated by approximately 0.020 inch. This procedure also provides higher crystal growth rates than those obtained with conventional sealed-tube methods. (Author)

Descriptors :   (*SEMICONDUCTORS, ELECTROLUMINESCENCE), (*ELECTROLUMINESCENCE, SEMICONDUCTORS), (*DISPLAY SYSTEMS, ELECTROLUMINESCENCE), GALLIUM ALLOYS, ARSENIC ALLOYS, GALLIUM COMPOUNDS, ALUMINUM COMPOUNDS, ARSENIDES, PHOSPHIDES, DIRECT CURRENT, VOLTAGE, SINGLE CRYSTALS, CRYSTAL GROWTH, SOLID SOLUTIONS

Distribution Statement : APPROVED FOR PUBLIC RELEASE