Accession Number : AD0611195

Title :   LOCALIZED VIBRATIONS DUE TO BORON AND LITHIUM IN THE SILICON LATTICE,

Corporate Author : ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s) : Balkanski,M. ; Nazarewicz,W.

Report Date : 15 SEP 1963

Pagination or Media Count : 15

Abstract : The infrared absorption spectrum of Silicon crystals containing two electrically compensated impurities, Boron and Lithium, in concentrations above 10 to the 19th power per cu cm reveals six absorption peaks at: 648, 657, 585, 564, 534 and 522/cm 1 attributed to localized vibrations due to those impurities. (Author)

Descriptors :   (*SILICON, CRYSTALS), (*CRYSTAL LATTICES, SILICON), (*ABSORPTION SPECTRA, SILICON), INFRARED SPECTROSCOPY, VIBRATION, FRANCE, IMPURITIES, BORON, LITHIUM, OPTICAL PROPERTIES, CRYSTAL DEFECTS, POLARIZATION

Distribution Statement : APPROVED FOR PUBLIC RELEASE