Accession Number : AD0611957
Title : P-N HETEROJUNCTIONS.
Descriptive Note : Revised ed.,
Corporate Author : CARNEGIE INST OF TECH PITTSBURGH PA
Personal Author(s) : Perlman,S. S. ; Feucht,D. L.
Report Date : 15 NOV 1963
Pagination or Media Count : 16
Abstract : A classical kinetic emission model coupled with an assumed energy band diagram which includes the effects of a discontinuity in the electron affinity, effective mass, permittivity and the energy gap at the junction interface is used as the basis for an analysis of the static currentvoltage characteristic of the abrupt p-n heterojunction. The derived characteristic is then used to determine regions of quasi-equilibrium within the depletion layer and to predict the position dependence of the quasi-Fermi levels. Two distinct modes of operation are predicted for the heterojunctions I-V characteristic: Metal-semiconductor type operation where the current is limited by the ability of the carriers to surmount the potential barrier at the junction interface and homojunction type operation where the current is limited by the ability of the carriers to diffuse away from the junction depletion region. The predicted extrapolated saturation current for the former type of operation is, in general, significantly less than that for the latter. The position dependence of the quasi-Fermi levels is also different for the two types of operation. For metal-semiconductor type operation a drop in the quasi-Fermi level across the depletion layer is expected, whereas for homodiode type operation there is a negligible variation of the quasiFermi level in this region. (Author)
Descriptors : (*SEMICONDUCTORS, SANDWICH CONSTRUCTION), EPITAXIAL GROWTH, ELECTRICAL PROPERTIES, QUANTUM THEORY, KINETIC THEORY, SOLID STATE PHYSICS, MATHEMATICAL MODELS
Distribution Statement : APPROVED FOR PUBLIC RELEASE