Accession Number : AD0611965

Title :   STRESS-INDUCED DONOR DEIONIZATION IN GAAS,

Corporate Author : PURDUE UNIV LAFAYETTE IND

Personal Author(s) : Sladek,R. J.

Report Date : 1964

Pagination or Media Count : 8

Abstract : An analysis was made of the Hall effect versus pressure data for various gallium arsenide samples and it was demonstrated that such data can be explained quantitavely in terms of the pressure dependence of the ionization energy and thus degree of ionization of non-shallow donors present in the samples. The pressure dependence of the ionization energy is interpreted as due to the conduction band moving away from the non-shallow donor level. The different behaviors of various samples are interpretated in terms of different kinds and concentrations of impurities determining the charge carrier concentrations. Thus in samples exhibiting large piezoHall effects, all the carriers come from non-shallow donors. In samples exhibiting small piezo-Hall effects most of the carriers come from shallow donors, whose ionization energy is relatively insensitive to pressure, and only a few of the carriers come from non-shallow donors. A discussion of the possible nature of the nonshallow donors is also given.

Descriptors :   (*SEMICONDUCTORS, STRESSES), (*GALLIUM ALLOYS, ARSENIC ALLOYS), (*HALL EFFECT, PRESSURE), IMPURITIES, IONIZATION, ELECTRON TRANSITIONS, PIEZOELECTRIC EFFECT, MATHEMATICAL MODELS

Distribution Statement : APPROVED FOR PUBLIC RELEASE