Accession Number : AD0612051
Title : STUDY OF SURFACE STATES IN SEMICONDUCTORS.
Descriptive Note : Interim rept. for 5 Jul-4 Sep 64,
Corporate Author : TYCO LABS INC WALTHAM MASS
Personal Author(s) : Rupprecht ,G. ; Smakula,P. H.
Report Date : FEB 1965
Pagination or Media Count : 24
Abstract : Silicon surfaces were studied, using the pulsed field effect, which were prepared by three means: untreated, thermal oxide grown in air (no H2O), and anodically oxidized, the oxide being grown to various thicknesses. On 10 omega-cm n-type silicon, samples oxidized to less than 500 A showed a surface state 0.54 eV below the conduction band. Oxide thicknesses greater than this showed a resulting state 0.64 eV below the conduction band. At the same time, the capture cross section increased with oxide thickness. Preliminary results indicate that the density of surface states is inversely proportional to the dislocation density. (Author)
Descriptors : (*SEMICONDUCTORS, SURFACE PROPERTIES), (*SURFACE PROPERTIES, SEMICONDUCTORS), DENSITY, SILICON ALLOYS, HALL EFFECT, ELECTRICAL PROPERTIES, OXIDES, COATINGS, THICKNESS, PHOSPHORESCENT MATERIALS
Distribution Statement : APPROVED FOR PUBLIC RELEASE