Accession Number : AD0614000
Title : NEW CONCEPTS FOR SOLID STATE MICROWAVE GENERATORS.
Descriptive Note : Quarterly rept. no. 7, 1 Jul-31 Oct 64,
Corporate Author : SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
Personal Author(s) : Scarlett,R. M.
Report Date : 31 OCT 1964
Pagination or Media Count : 38
Abstract : An extensive series of experimental surface controlled avalanche transistor (SCAT) devices, all basically planar structures, have been made. Different substrate (drain) resistivities, different source diffusion schedules, and different means of producing the thin oxide under the gate region were investigated. Two geometries were used, a circular and a stripe configuration. Although few consistent results were achieved, it appeared that the best oxide of those investigated was produced by thermal oxidation in dry oxygen at 1100C. By observing light emission, it was found that the operation was probably quite nonuniform, accounting for the transconductance being less than calculated. Two types of drift in the characteristics were noted, one reversible upon reversing gate to source voltage, and the other apparently irreversible. The first was traced to ion motion on the oxide surface, but the second is not yet understood. (Author)
Descriptors : (*MICROWAVE EQUIPMENT, SEMICONDUCTORS), (*TRANSISTORS, PREPARATION), (*AVALANCHE DIODES, PREPARATION), SILICON COMPOUNDS, DIOXIDES, OXIDATION, SEMICONDUCTING FILMS, IMPURITIES, DIBORANES, PHOSPHORUS COMPOUNDS, OXIDES, NITRIDES, DIFFUSION, EPITAXIAL GROWTH, ELECTRODEPOSITION
Distribution Statement : APPROVED FOR PUBLIC RELEASE