Accession Number : AD0614842
Title : DEFECT BEHAVIOR IN PLASTICALLY DEFORMED SEMICONDUCTORS.
Descriptive Note : Final rept.,
Corporate Author : MICHIGAN TECHNOLOGICAL UNIV HOUGHTON DEPT OF METALLURGY
Personal Author(s) : Heldt,L. A.
Report Date : 17 MAR 1965
Pagination or Media Count : 6
Abstract : This research is concerned with the behavior of defects during plastic deformation and the relation of this behavior to observed plastic properties. The experimental program is concerned with the semiconductor elements, for which rather direct means of investigation are applicable. The study involves carefully controlled determinations of the plastic properties of material deformed under constant stress. The effects of: (1) heavy doping (2) specimen orientation and type of deformation and (3) an impurity precipitated along the dislocation lines, are measured in order to determine the relation of dislocation motion to the production of point defects, the effect of the density of dislocation intersections on dislocation motion, and the effects of an impurity precipitated along dislocation lines upon dislocation motion. (Author)
Descriptors : (*CRYSTAL DEFECTS, SEMICONDUCTORS), (*SEMICONDUCTORS, DEFORMATION), STRESSES, GERMANIUM, ANTIMONY, DIFFUSION, SINGLE CRYSTALS, CRYSTAL GROWTH, CREEP, TENSILE PROPERTIES, HEAT TREATMENT, IMPURITIES
Distribution Statement : APPROVED FOR PUBLIC RELEASE