Accession Number : AD0615808

Title :   THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.

Descriptive Note : Quarterly progress rept. no. 6, 1 Dec 64-28 Feb 65,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Orr,Coy D.

Report Date : 28 FEB 1965

Pagination or Media Count : 49

Abstract : Reactively sputtered thin films of tantalum oxide deposited onto thermally oxidized silicon offer a very wide range of sheet resistivities. The application of an external d-c bias to the substrate during sputtering alters sheet resistivity with no change in film thickness. Resistors of 237 ohms/sq changed less than 3% after 1000 hours at +125C and 2.5 watts/sq inch. Reactively sputtered Ta2O5 dielectric films deposited onto aluminum electrodes offer capacitance values from 0.3 to 3.0 pF/sq. mil and d-c breakdown voltages of 60 to 6 volts, respectively. Yields of 64% within =20% of 0.5 pF/sq. mil and breakdown voltage greater than 18 volts have been demonstrated. Capacitors tested for 1000 hours at +125C and 60% of destructive breakdown voltage changes less than 2% from initial capacitance. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, PREPARATION), (*FILMS, SPUTTERING), (*SPUTTERING, INTEGRATED CIRCUITS), (*TANTALUM COMPOUNDS, SPUTTERING), OXIDES, SILICON, ELECTRICAL RESISTANCE, RESISTORS, CAPACITORS, DIELECTRIC FILMS, ELECTRIC CONNECTORS, ELECTROCHEMISTRY, ALUMINUM, VAPOR PLATING, MICROELECTRONICS

Distribution Statement : APPROVED FOR PUBLIC RELEASE