Accession Number : AD0616350

Title :   NEW SOLID-STATE DEVICE CONCEPTS,

Corporate Author : GENERAL ELECTRIC RESEARCH LAB SCHENECTADY N Y

Personal Author(s) : Aven,M. ; Carlson,R. O. ; Ehle,R. S. ; Hall,R. N. ; Woodbury,H. H.

Report Date : APR 1965

Pagination or Media Count : 39

Abstract : The solubility of Ag in CdS was measured between 375 and 900C and the results are interpreted to indicate at least two and probably three different forms of Ag in CdS. Diffusion profiles were obtained between 300 and 500C. The rate of diffusion of Ag shows a strong concentration dependence and is extremely rapid for dilute Ag concentrations. The profiles are discussed in terms of three independent steps in the incorporation of Ag in CdS. Optical absorption of ZnSe-x Te1-x crystals in the band edge region and their emission characteristics under photoluminescent and electroluminescent excitation were examined. The existence of a minimum in the band gapcomposition relationship was confirmed. Considerable broadening of the band edge properties was observed in both absorption and emission for the composition range of 0.09 < x < or = 0.90. P-n junctions fabricated from ZnSe0.36 Te0.64 crystals demonstrated external quantum efficiencies of 2.4% with the major peak of the electroluminescence spectrum at 2.0 ev. The internal reflectivities and electrical properties of Ag, Cu, Au, Al, Rh, and Ni films deposited by evaporation upon single crystals of GaAs were studied. (Author)

Descriptors :   (*SEMICONDUCTORS, MATERIALS), (*CADMIUM COMPOUNDS, SULFIDES), (*ZINC COMPOUNDS, OPTICAL PROPERTIES), (*SEMICONDUCTING FILMS, PHYSICAL PROPERTIES), SILVER, DIFFUSION, SOLUBILITY, IMPURITIES, SELENIDES, TELLURIDES, CRYSTALS, ABSORPTION SPECTRA, LUMINESCENCE, ELECTROLUMINESCENCE, EMISSIVITY, REFLECTION, ELECTRICAL PROPERTIES, GALLIUM ALLOYS, ARSENIC ALLOYS, METAL FILMS

Distribution Statement : APPROVED FOR PUBLIC RELEASE