Accession Number : AD0616637

Title :   GROWTH AND CHARACTERIZATION OF BETASILICON CARBIDE SINGLE CRYSTALS.

Descriptive Note : Scientific rept. no. 1, May 64-Feb 65,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : Halden,Frank A. ; Rosengreen,Arne ; nelson,Walter E.

Report Date : MAY 1965

Pagination or Media Count : 25

Abstract : The process for growing beta-silicon carbide single crystals from solution in carbon-saturated silicon melts was examined to determine how larger crystals may be obtained. It appears that crystals grown to date have been limited in size by the small volume of the supersaturated zone provided for crystallization and by the presence of unstable boundary layers at the crystal growth interface. Means for removing these limitations are suggested. Further work on preparation of ohmic contacts on grown crystals, and on Hall measurements, has served to clarify many experimental limitations in working with very small crystals. Electron mobilities in the range of 500 to 900 sq cm/vsec were obtained on relatively large crystals having resistivities of about 0.1 ohm-cm. Smaller crystals having resistivities of approximately 1 ohm-cm had mobilities in the range of 1000 to 3000 sq cm/vsec. However, since on these crystals the size of contact spots is large compared with intercontact spacings and the correction factors thus affect the resultant value strongly, it is not at present possible to give precise values of mobility and resistivity. (Author)

Descriptors :   (*SILICON COMPOUNDS, CARBIDES), (*SINGLE CRYSTALS, CARBIDES), (*CRYSTAL GROWTH, SILICON COMPOUNDS), (*CARBIDES, SINGLE CRYSTALS), CRYSTALLIZATION, SURFACE PROPERTIES, ELECTRICAL RESISTANCE, GRAPHITE, SILICON, MELTING, HALL EFFECT, MEASUREMENT

Distribution Statement : APPROVED FOR PUBLIC RELEASE