Accession Number : AD0617424
Title : TRANSISTOR, FIELD EFFECT, INSULATED GATE, 100 MC AMPLIFIER.
Descriptive Note : Quarterly progress rept. no. 1, 1 Dec 64-1 Mar 65,
Corporate Author : SILICONIX INC SUNNYVALE CALIF
Personal Author(s) : Parker,Gerald L.
Report Date : 01 MAR 1965
Pagination or Media Count : 27
Abstract : Design, manufacture, and evaluation of two study devices, the MOS I and MOS II insulated-gate field-effect transistors, have been completed. Effect of masking tolerances and high-frequency properties have been evaluated; data on d-c and a-c characteristics are recorded and compared to theory. It was found that the major limitation to device performance was the gate-source distributive resistance that charges the gate-source capacitance. A series resistance of approximately 15 ohms transforms into a parallel resistance of 17K at 100 mc. This reduces the real part of the input impedance to 6K typical. This problem will be solved by redesigning the gate bonding pad and shortening the gate length in MOS III to meet the required 20 db power gain for a 100 mc amplifier. (Author)
Descriptors : (*TRANSISTOR AMPLIFIERS, VERY HIGH FREQUENCY), (*TRANSISTORS, PERFORMANCE(ENGINEERING)), GAIN, RADIOFREQUENCY POWER, SEMICONDUCTORS, OXIDES, ELECTRICAL RESISTANCE, ELECTRICAL IMPEDANCE, ALUMINUM, SILICON COMPOUNDS, PROCESSING
Distribution Statement : APPROVED FOR PUBLIC RELEASE