Accession Number : AD0617539
Title : HIGH POWER VARACTOR FOR UHF TRANSMISSION.
Descriptive Note : Quarterly progress rept. no. 3, 1 Jan-31 Mar 65,
Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Personal Author(s) : Louis,G. A.
Report Date : 31 MAR 1965
Pagination or Media Count : 23
Abstract : The report describes the epitaxial layer structure and its evaluation and control. The theory covering the diffusion of impurities during epitaxial growth is discussed. Improved low temperature oxide passivation is described. Comparisons are made between unpackaged and packaged die characteristics. Minor changes in the test circuit are noted. (Author)
Descriptors : (*VARACTOR DIODES, ULTRAHIGH FREQUENCY), SILICON, CRYSTALS, EPITAXIAL GROWTH, DIFFUSION, IMPURITIES, SEMICONDUCTORS, OXIDES, DIES, PACKAGING, MANUFACTURING
Distribution Statement : APPROVED FOR PUBLIC RELEASE