Accession Number : AD0617543

Title :   DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATIONS.

Descriptive Note : Quarterly rept. no. 12, 1 Mar-31 May 65,

Corporate Author : SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS SEMICONDUCTOR DIV

Personal Author(s) : Wang,P. ; Yee,R. ; Eknaian,J.

Report Date : 01 JUN 1961

Pagination or Media Count : 33

Abstract : Work has essentially been completed on PNPN lightsensitive matrices made by both oxide-masked epitaxy and by epitaxy-diffusion techniques. Matrices fabricated with the latter technique are considerably more sensitive, turning on with only 0.2 foot-candles of incident illumination. (This sensitivity can be reduced with a subsequent improvement in uniformity from unit to unit.) Measurement methods are described, and light sensitivity results are given for both types of units. A search for the best method for making matched NPN-PNP transistor pairs has begun. A discussion of the pros and cons of all known methods is presented, with the conclusion that the beam lead process offers the most practical way to achieve such devices. A slowing down of this portion of the program will result to allow related company-funded beam lead developments to catch up with device fabrication developments under the contract. (Author)

Descriptors :   (*CRYSTAL GROWTH, SILICON), (*EPITAXIAL GROWTH, SILICON), (*SILICON, EPITAXIAL GROWTH), (*SEMICONDUCTORS, EPITAXIAL GROWTH), CRYSTALS, IMPURITIES, OXIDES, FILMS, ELECTRONIC SWITCHES, TRANSISTORS, PHOTOSENSITIVITY, MICROELECTRONICS, MANUFACTURING, PERFORMANCE(ENGINEERING)

Distribution Statement : APPROVED FOR PUBLIC RELEASE