Accession Number : AD0618496

Title :   RESEARCH ON SOLID STATE NOISE DEVICES.

Descriptive Note : Final rept. for 13 Jun 62-30 Jun 65,

Corporate Author : SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF

Personal Author(s) : Farrington,David

Report Date : 30 JUN 1965

Pagination or Media Count : 57

Abstract : This report is concerned with an experimental investigation of a silicon noise diode having an avalanche breakdown voltage of approximately 12 volts and capable of producing high amplitude white noise over the frequency range 40 kc to 200 kc. The influence of the device parameters on the performance of completed devices from many independent diffusions is examined. A study of the design of a noise generator with high pulse rate is presented. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, NOISE(RADIO)), (*AVALANCHE DIODES, NOISE GENERATORS), (*NOISE GENERATORS, AVALANCHE DIODES), SILICON, LOW FREQUENCY, VOLTAGE, PERFORMANCE(ENGINEERING)

Distribution Statement : APPROVED FOR PUBLIC RELEASE