Accession Number : AD0618704
Title : INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME VII. OXIDATION.
Descriptive Note : Technical rept.
Corporate Author : RESEARCH TRIANGLE INST DURHAM N C
Report Date : JUN 1965
Pagination or Media Count : 285
Abstract : The common methods of growing oxide layers on silicon use either the high temperature reactions of silicon with steam (either in an open tube or a high pressure bomb), dry oxygen, wet oxygen, or the anodic reaction of silicon with various electrolytes or plasmas at room temperature or thereabout. The kinetics of each of these reactions is discussed and the results from typical experimental systems are presented. Oxide layers may also be deposited on the silicon surface by pyrolytic decomposition, reactive sputtering or vacuum evaporation. The effect of impurities upon the bulk physical and electrical properties of commercial glasses is discussed to suggest the type of variations in properties that might be anticipated with similar variations of the impurity content of oxide layers. Oxides in silicon device technology are used for impurity masking during diffusion, surface protection and passivation, electrical isolation, and as regions of active and passive components probably for all applications in which the density of surface charge at the oxide-silicon interface is critical. Procedures for obtaining high quality thermal oxides and for measuring the thickness of any oxide layer on silicon conclude the report.
Descriptors : (*SEMICONDUCTOR DEVICES, SILICON), (*SILICON, OXIDATION), FILMS, OXIDES, GLASS, SILICON COMPOUNDS, DIOXIDES, DENSITY, REFRACTIVE INDEX, CRYSTAL DEFECTS, POROSITY, ELECTRICAL RESISTANCE, DIELECTRIC PROPERTIES, SURFACE PROPERTIES, MICROELECTRONICS, INTEGRATED CIRCUITS
Distribution Statement : APPROVED FOR PUBLIC RELEASE