Accession Number : AD0618736
Title : RESEARCH AND DEVELOPMENT FOR SEMICONDUCTOR SURFACE CONTROL AND STABILIZATION.
Descriptive Note : Final rept. for Nov 63-Feb 65,
Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Personal Author(s) : Kang,Ki Dong ; Metz,E. D. ; Lund,C. ; Adamic,J. ; Lee,F.
Report Date : 14 MAR 1965
Pagination or Media Count : 113
Abstract : Studies were made of certain surface effects on silicon device parameters. These studies can be categorized as falling in three broad areas: the oxide-ambient gas interface, the oxide-semiconductor interface, and the oxide itself. Topics included in this investigation were: gross chemical contamination of oxide surfaces, oxide defects generated during manufacture of devices, interface distributions and gettering of metallics, modulation of surface electron density in MOS devices, and gamma-ray irradiation effects on conventional and MOS silicon devices. Also explained are the surface phenomena occuring in all these areas which might be consequential in the control and stabilization of semiconductor surfaces. (Author)
Descriptors : (*SEMICONDUCTORS, SURFACES), (*SILICON, SURFACE PROPERTIES), (*TRANSISTORS, SURFACES), SILICON COMPOUNDS, OXIDES, CONTAMINATION, CRYSTAL DEFECTS, DAMAGE, RADIATION EFFECTS, CONTROL, STABILIZATION, GLASS, GASES, DEGRADATION, GOLD, DIFFUSION, DIOXIDES, GAMMA RAYS
Distribution Statement : APPROVED FOR PUBLIC RELEASE