Accession Number : AD0618909

Title :   A FUNDAMENTAL STUDY OF EPITAXY BY FLASH EVAPORATION.

Descriptive Note : Final rept. for 1 Oct 64-30 Mar 65,

Corporate Author : PHILCO BLUE BELL PA APPLIED RESEARCH LAB

Personal Author(s) : Richards,John L.

Report Date : 30 APR 1965

Pagination or Media Count : 76

Abstract : A study was made of the conditions under which films of III-V compounds can be evaporated and deposited stoichiometrically onto a number of substrates. The crystalline nature and crystal quality of films of seven of the III-V compounds deposited onto Ge, CaF2, and GaAs substrates were studied with reference to changes in such parameters as evaporator and substrate temperature, lattice mismatch with substrate, and substrate orientation. Conditions were determined for the preparation of epitaxial films. Diodes were prepared in the deposited films by diffusion and alloying techniques. Electrical characteristics of these diodes were measured and found to be comparable with those in bulk material.

Descriptors :   (*SEMICONDUCTING FILMS, EPITAXIAL GROWTH), (*EPITAXIAL GROWTH, SEMICONDUCTING FILMS), EVAPORATION, VAPOR PLATING, CRYSTAL STRUCTURE, GERMANIUM, GALLIUM ALLOYS, ARSENIC ALLOYS, SOLID SOLUTIONS, PHASE STUDIES, X RAY DIFFRACTION, ELECTRON DIFFRACTION, ABSORPTION SPECTRA, IMPURITIES, ELECTRICAL PROPERTIES, MICA, PHOSPHORUS ALLOYS, INDIUM ALLOYS, ANTIMONY ALLOYS, SEMICONDUCTOR DIODES

Distribution Statement : APPROVED FOR PUBLIC RELEASE