Accession Number : AD0619060

Title :   LOW TEMPERATURE VAPOR GROWTH STUDIES.

Descriptive Note : Final rept. for 1 Jan 63-31 Dec 64,

Corporate Author : IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s) : Reisman,A.

Report Date : JUL 1965

Pagination or Media Count : 110

Abstract : In the Ge-I2-H2-He vapor transport systems, GaI3, B2H6 and AsH3 were employed as doping agents. Using the hydrogen reduction of GeCl4, it was found possible to grow 'mirror' smooth Ge epitaxy of excellent bulk quality as low as 500C on <100> oriented surfaces. An apparatus for the pyrolysis of GeH4 in H2 was constructed and films of Ge epitaxy on Ge were grown. As a preliminary step toward obtaining fundamental kinetic information on heterogeneous fas-solid reactions in both dynamic (flow) and static(closed)systems, the relative importance of gas phase mass transport rates as compared to surface reaction rates was analyzed and described in detail. The entropy of gaseous GeCl2 at 700C was calculated to be 45 e.u. Preliminary results of a Bourdon Gauge study of equilibrium in the ZnSe-I2 system are discussed. Several exploratory approaches were utilized in an attempt to produce tetragonal GeO2.

Descriptors :   (*SEMICONDUCTING FILMS, CRYSTAL GROWTH), (*SINGLE CRYSTALS, CRYSTAL GROWTH), (*CRYSTAL GROWTH, VAPORS), (*GERMANIUM, CRYSTAL GROWTH), IODINE, HYDROGEN, GALLIUM COMPOUNDS, ARSENIC COMPOUNDS, HYDRIDES, IMPURITIES, PYROLYSIS, DISPROPORTIONATION, CHLORIDES, REDUCTION(CHEMISTRY), EPITAXIAL GROWTH, ZINC COMPOUNDS, SELENIDES, REACTION KINETICS, ENTROPY, CHEMICAL EQUILIBRIUM, OXIDES

Distribution Statement : APPROVED FOR PUBLIC RELEASE