Accession Number : AD0619083

Title :   ENGINEERING SERVICES ON TRANSISTORS.

Descriptive Note : Quarterly progress rept. no. 8, 1 Jan-31 Mar 65,

Corporate Author : WESTERN ELECTRIC CO INC NEW YORK

Personal Author(s) : Arnold,S. R. ; Boll,H. J. ; Crowell,C. R. ; Iwersen,J. E. ; Murphy,B. T.

Report Date : 30 JUN 1965

Pagination or Media Count : 93

Abstract : A low-resistance ohmic base contact for a planar germanium transistor is essential if maximum microwave performance of the device is to be achieved. A base contact employing a copper-germanium intermetallic layer, followed by titanium-aluminum or chromiumaluminum metallization has been shown to have satisfactory properties for the devices under current development. Devices using this contact have shown improved performance in the 1-to 6-Gc range. Results of a new simplified method of determining unilateral gain (U) from quantities that are relatively easily measured agree well with those obtained by other methods. Current limiters based on the high-field saturation of electrondrift velocity in germanium were fabricated by diffusing 10-micron-square n(+) contacts, 2 microns apart, into a 0.5-micron-deep Sb-diffused layer having a surface concentration of about 10 to the 17th power/cu cm. Limiting current was about 2.5 ma between 2 and 16 volts; the conductance in the limiting range was approximately 0.00004 mho, and contact-to-contact capacitance was 0.1 pf. It has been shown that is is possible to design fast, nonsaturating logic circuits that are stable against spurious oscillation.

Descriptors :   (*TRANSISTORS, GERMANIUM), (*INTEGRATED CIRCUITS, TRANSISTORS), MICROWAVE EQUIPMENT, COPPER ALLOYS, GERMANIUM ALLOYS, SEMICONDUCTING FILMS, TITANIUM ALLOYS, ALUMINUM ALLOYS, CHROMIUM ALLOYS, GAIN, CURRENT LIMITERS, COMPUTER LOGIC, GATES(CIRCUITS), HYSTERESIS, NOISE(RADIO), X BAND

Distribution Statement : APPROVED FOR PUBLIC RELEASE