Accession Number : AD0619289

Title :   ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS,

Corporate Author : PHILCO BLUE BELL PA APPLIED RESEARCH LAB

Personal Author(s) : Lucovsky,G.

Report Date : 1965

Pagination or Media Count : 10

Abstract : The wavelength dependence of the photoionization cross section for deep, semiconductor impurity centers, e.g., In doped Si, is calculated using a model in which the ground state wave function is determined solely by a suitable short range ion core potential. Absorption to excited states is explained by a long range, unperturbed coulomb potential. (Author)

Descriptors :   (*SEMICONDUCTORS, IMPURITIES), (*CRYSTAL DEFECTS, IONIZATION), PHOTOCHEMICAL REACTIONS, PROBABILITY, SILICON, INDIUM, ATOMIC ENERGY LEVELS, ABSORPTION, EXCITATION

Distribution Statement : APPROVED FOR PUBLIC RELEASE