Accession Number : AD0619326
Title : ON THE POSSIBLE GENERATION OF NEGATIVE TEMPERATURES IN A DOPED SEMICONDUCTOR UNDER STATIONARY EXCITATION,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s) : Kolesnikov,A. A. ; Uritskii,Z. I.
Report Date : 29 JUL 1965
Pagination or Media Count : 7
Abstract : It is shown that by experimentally determining the magnitude of the kinetic coefficient of the transition from the i-th level to the L-th level, and probability of elementary radiation transition at a frequency where i>1, it is possible to evaluate the possibility of creating negative temperatures in semiconductors in a stationary regime of lighting.
Descriptors : (*SEMICONDUCTORS, COOLING), CRYSTAL DEFECTS, LOW TEMPERATURE, ATOMIC ENERGY LEVELS, PHOTOELECTRIC EFFECT, EXCITATION, ILLUMINATION, ELECTRON TRANSITIONS, PROBABILITY, USSR
Distribution Statement : APPROVED FOR PUBLIC RELEASE