Accession Number : AD0619459

Title :   NOISE OPTIMIZATION OF FIELD-EFFECT TRANSISTORS,

Corporate Author : NAVAL ORDNANCE TEST STATION CHINA LAKE CALIF

Personal Author(s) : DiLoreto,A. G. ; Larson,R. W.

Report Date : JUN 1965

Pagination or Media Count : 47

Abstract : The field-effect or unipolar transistor was compared with bipolar and thermionic devices and a method was sought to minimize internally generated noise. Both operation without a gate-biasing resistor and operation at cryogenic temperatures resulted in noise reduction. At low audio frequencies, 1/f noise impaired performance but was not detrimental when large values of source resistance were used. A theoretical break-frequency for the f squared noise exhibited at ultrasonic frequencies was determined. The comparative noise performance of a unipolar and a bipolar transistor for a given resistive source was studied. (Author)

Descriptors :   (*TRANSISTORS, NOISE(RADIO)), POLARIZATION, OPTIMIZATION, PERFORMANCE(ENGINEERING), CRYOGENICS, RESISTORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE