Accession Number : AD0619524

Title :   HIGH VOLTAGE SILICON RECTIFIER STACKS.

Descriptive Note : Quarterly progress rept. no. 15, 25 Dec 64-25 Mar 65,

Corporate Author : INTERNATIONAL RECTIFIER CORP LOS ANGELES CALIF

Personal Author(s) : Conn,A.

Report Date : 25 MAR 1965

Pagination or Media Count : 13

Abstract : It was shown that repeated cycling between 25C and 125C caused seemingly random failures (dielectric leakage) among the first 75 tanks. However, it was also shown that tanks which show no increase of dielectric leakage after one temperature cycle, or those which stabilize at a fixed value of dielectric leakage do not show a further increase with repetition of cycling. An extensive investigation into the compatibility of Askarel with various types of gasketing materials was instigated since it was found that the gasket material (nitrile rubber and cork) used did lower the resistivity of the Askarel. A further investigation was made of the compatibility of the internal materials of the tank with Askarel. It was found that almost any material lowered the resistivity of the Askarel. Calculations show that if the dielectric oil has the minimum acceptable (Manufacturer's Specification) volume resistivity, the unit would fail the hi-pot test. This means that no contamination can be allowed whatsoever. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, RECTIFIERS), (*RECTIFIERS, SILICON), DIELECTRIC PROPERTIES, OILS, GASKETS, COMPATIBILITY, CONTAMINATION, ELECTRICAL RESISTANCE

Distribution Statement : APPROVED FOR PUBLIC RELEASE