Accession Number : AD0619581
Title : OPTICAL PROPERTIES OF DEGENERATE SILICON,
Descriptive Note : Technical note,
Corporate Author : ECOLE NORMALE SUPERIEURE PARIS (FRANCE)
Personal Author(s) : Balkanski,M. ; Besson,J. M.
Report Date : 1965
Pagination or Media Count : 16
Abstract : The experimental results were obtained as follows: Reflectivity measurements were taken at all temperatures using infrared vacuum spectrometer. Silicon crystals were aluminized on one half of the working area which minimized the errors due to differences in surface state and planeity between the sample and the reference mirror. For low temperature measurements, a thin poly-ethylene sheet protected the sample surface against oil deposits. The samples were in contact with the coolant through an electrolytic copper holder and their temperature was measured directly with a thermocouple. The KramersKronig inversion was applied to the experimental data to obtain n and k. Then the classical Drude-Zener model was used to give an estimate of the mobility, effective mass and relaxation time of the carriers.
Descriptors : (*SEMICONDUCTORS, OPTICAL PROPERTIES), (*SILICON, OPTICAL PROPERTIES), FRANCE, IMPURITIES, REFLECTION, INFRARED SPECTROSCOPY, TEMPERATURE, RELAXATION TIME, ABSORPTION, CRYSTALS, SOLID STATE PHYSICS
Distribution Statement : APPROVED FOR PUBLIC RELEASE