Accession Number : AD0619717

Title :   INVESTIGATION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF JUNCTIONS IN VAPOR-DEPOSITED COMPOUND SEMICONDUCTORS.

Descriptive Note : Final rept. for 1 Jun 64-31 May 65,

Corporate Author : SPERRY RAND RESEARCH CENTER SUDBURY MASS

Personal Author(s) : Minden,Henry T.

Report Date : 30 JUN 1965

Pagination or Media Count : 38

Abstract : Germanium was epitaxially deposited on gallium arsenide by means of the hydrogen reduction of GeCl4. Above 800C, germanium reacted with the GaAs seed to form a black powder. Proper deposition was observed below about 750C. Nonetheless, cross doping of the Ge layer by gallium was observed even at deposition temperatures as low as 670C; the heterojunctions showed tunnel diode characteristics. Deliberately doped junctions of p-Ge on n-GaAs showed the I-V characteristics of Ge junctions, while the photovoltaic response was that of a GaAs junction. The voltage sign of the response was that of normal p-n junctions. An apparatus is described for the epitaxial deposition of GaAs. AsCl3 was flowed over hot gallium metal and GaAs deposited downstream at a lower temperature. The conditions for the preparation of high-purity, smooth layers are described, and doping techniques are given. Epitaxial lasers were made by the deposition of zinc-doped epitaxial layers on n-type GaAs substrates. (Author)

Descriptors :   (*SEMICONDUCTORS, PHYSICAL PROPERTIES), (*GERMANIUM, EPITAXIAL GROWTH), (*EPITAXIAL GROWTH, GERMANIUM), (*LASERS, SEMICONDUCTORS), GALLIUM ALLOYS, ARSENIC ALLOYS, VAPOR PLATING, IMPURITIES, PHOTOELECTRIC EFFECT, ELECTRICAL PROPERTIES, OPTICAL PROPERTIES, MICROSTRUCTURE, ZINC

Distribution Statement : APPROVED FOR PUBLIC RELEASE