Accession Number : AD0620450
Title : AN INVESTIGATION OF SURFACE STATES ON SILICON EMPLOYING THE MOS CAPACITANCE METHOD.
Descriptive Note : Master's thesis,
Corporate Author : KANSAS STATE UNIV MANHATTAN
Personal Author(s) : Roberds,Donald W.
Report Date : JUN 1965
Pagination or Media Count : 97
Abstract : The MOS (metal-oxide- semiconductor) device was used to measure the density and position within the forbidden gap of surface states on silicon. The theory of the silicon space charge is discussed and an equation for this charge is derived, relating it to the voltage drop across the silicon. The MOS structure, fabrication, and variation of capacity with d. c. bias voltage are discussed. Experimental results are presented of the determination of surface state density versus position in the band gap.
Descriptors : (*SILICON, SURFACE PROPERTIES), (*SURFACE PROPERTIES, CRYSTAL DEFECTS), (*CAPACITANCE, SURFACE PROPERTIES), ATOMIC ENERGY LEVELS, SEMICONDUCTORS, SPACE CHARGE, METALS, OXIDES, SEMICONDUCTOR DIODES, CAPACITORS, POTENTIAL THEORY
Distribution Statement : APPROVED FOR PUBLIC RELEASE