Accession Number : AD0620689

Title :   ION-PAIRING BETWEEN LITHIUM AND THE RESIDUAL ACCEPTORS IN GASB,

Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO

Personal Author(s) : Baxter,R. D. ; Bate,R. T. ; Reid,F. J.

Report Date : 11 MAY 1964

Pagination or Media Count : 11

Abstract : The electrical properties of p-type GaSb containing lithium were measured over the temperature range 20-400K. It was found that introduction of lithium by diffusion at temperatures below 500C results in reduced hole concentrations and increased Hall mobilities. In addition, the residual acceptor level at approximately 0.03 ev characteristic of pure material, apparently disappears and is replaced by a shallow acceptor level. This behavior is taken as evidence for the formation of ion pairs between lithium donors and doubly charged residual acceptors. Introduction of lithium by diffusion at 600C and subsequent heat treatment at lower temperature results in the formation of a large density of holes associated with a shallow level, suggesting the presence of substitutional lithium. (Author)

Descriptors :   (*GALLIUM ALLOYS, IMPURITIES), (*ANTIMONY ALLOYS, IMPURITIES), (*LITHIUM, HALL EFFECT), ELECTRICAL PROPERTIES, IONS, DIFFUSION, SEMICONDUCTORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE