Accession Number : AD0621649

Title :   STUDIES ON HIGH POWER GAAS LASERS.

Descriptive Note : Final technical rept. on Proj. DEFENDER, for 1 Jun 6331 May 65,

Corporate Author : IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s) : Title,R. S.

Report Date : 31 MAY 1965

Pagination or Media Count : 61

Abstract : The report is a report on the studies of factors influencing the high power operation of GaAs injection laser diodes. The report deals specifically with aspects of GaAs crystal preparation, electrical and optical characterization of the material, and with the design, parameterization, and testing of GaAs injection laser diodes. Diodes have been operated at 77K with an energy output in excess of 0.001 joules during a 120 micron sec. pulse and with an external quantum efficiency of 18%.

Descriptors :   (*LASERS, SEMICONDUCTOR DIODES), (*GALLIUM ALLOYS, ARSENIC ALLOYS), (*SEMICONDUCTOR DIODES, LASERS), CRYSTAL GROWTH, ELECTRICAL PROPERTIES, OPTICAL PROPERTIES, PERFORMANCE(ENGINEERING)

Distribution Statement : APPROVED FOR PUBLIC RELEASE