Accession Number : AD0621904

Title :   FOUR-TERMINAL FIELD-EFFECT TRANSISTORS.

Descriptive Note : Revised ed.,

Corporate Author : SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Cobbold,R. S. C. ; Trofimenkoff,F. N.

Report Date : 19 FEB 1965

Pagination or Media Count : 2

Abstract : A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF. (Author)

Descriptors :   (*TRANSISTORS, ELECTRICAL CONDUCTIVITY), MATHEMATICAL ANALYSIS, VOLTAGE

Distribution Statement : APPROVED FOR PUBLIC RELEASE