Accession Number : AD0621941
Title : NEW SOLID-STATE DEVICE CONCEPTS.
Descriptive Note : Scientific rept.,
Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER
Personal Author(s) : Aven,M. ; Carlson,R. O. ; Ehle,R. S. ; Hall,R. N. ; Woodbury,H. H.
Report Date : JUL 1965
Pagination or Media Count : 35
Abstract : Attention on CdS was shifted to stoichiometric problems and the effects of O2. Because of the high stability of SO2, firing CdS in O2 produces a 'reducing' action on the bulk crystal, equivalent to a small excess Cd firing. Electrical transport and contact properties of 1 to 10 ohm-cm ntype ZnS crystals were studied. Two types of levels were found below the conduction band of ZnS: shallow donor levels at 0.014 ev and deeper levels between 0.10 and 0.29 ev. Injection electroluminescent p-n junctions have been prepared from ZnSe0.36Te0.64 which show external quantum efficiencies of 18% at 70K. The resistance of various alloyed contacts and gold thermocompression bonds to n- and p-type GaAs was measured. The interface resistance of evaporated films of Ag, Au, and Al applied to GaAs is high unless the films are subjected to a high-temperature alloying step which damages their reflecting properties. Excellent laser diodes were made in which the p-type side was chemically etched down to within 2 microns of the junction. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, MATERIALS), (*LASERS, SEMICONDUCTOR DEVICES), (*CADMIUM COMPOUNDS, SULFIDES), (*ZINC COMPOUNDS, ELECTRICAL PROPERTIES), (*SEMICONDUCTING FILMS, PHYSICAL PROPERTIES), OXYGEN, SULFUR COMPOUNDS, OXIDES, SULFIDES, TRANSPORT PROPERTIES, ELECTROLUMINESCENCE, SELENIDES, TELLURIDES, METAL FILMS, SILVER, GOLD, ALUMINUM, GALLIUM ALLOYS, ARSENIC ALLOYS, OPTICAL PROPERTIES
Distribution Statement : APPROVED FOR PUBLIC RELEASE