Accession Number : AD0622209

Title :   GALVANOMAGNETIC PHENOMENA IN SEMICONDUCTORS AT LOW TEMPERATURES.

Descriptive Note : Semi-annual letter rept. no. 2, 1 May-1 Nov 65,

Corporate Author : COLORADO UNIV BOULDER

Personal Author(s) : Love,W. F. ; Miller,S. C.

Report Date : 01 NOV 1965

Pagination or Media Count : 5

Abstract : Computer calculations are in progress on the following problems: (1) Ionization energy of donor impurities in indium antimonide, (2) Magnetoresistance of p-type germanium including quantum effects, (3) Electron transport theory in high electric and magnetic fields. Experimental results on transversed magnetoresistance in pulsed magnetic fields to 185 kilogauss of single crystals of n-type germanium have been obtained. Work is in progress on measurements of electrical transport properties of n-InSb below 1K. (Author)

Descriptors :   (*SEMICONDUCTORS, MAGNETIC PROPERTIES), CRYOGENICS, ELECTRICAL RESISTANCE, MAGNETIC FIELDS, ELECTRIC FIELDS, TRANSPORT PROPERTIES, INDIUM ALLOYS, ANTIMONY ALLOYS, GERMANIUM

Distribution Statement : APPROVED FOR PUBLIC RELEASE