Accession Number : AD0622287
Title : FABRICATION AND EVALUATION OF SILICON EPITAXIAL FILMS MADE BY THE PYROLYTIC DECOMPOSITION OF SILICON TETRACHLORIDE.
Descriptive Note : Technical memo.,
Corporate Author : JOHNS HOPKINS UNIV SILVER SPRING MD APPLIED PHYSICS LAB
Personal Author(s) : Goodman,M. F.
Report Date : SEP 1965
Pagination or Media Count : 39
Abstract : EPITAXIAL FILM FABRICATION: The following items are discussed: gas bubbler for the saturator that insures saturation of the hydrogen carrier gas with SiCl4, reaction chamber that can withstand the 1000 to 1300C deposition temperature and will not appreciably dope the substrate material, a susceptor material that allows efficient RF coupling and negligible background doping, requirements for the carrier gas, and flow meters and valves that can handle the gases used. GROWING DOPED SILICON EPITAXIAL FILMS BY PYROLYTIC DECOMPOSITION: Preparation of the Si substrate includes chemical etching by hydrogen chloride gas. Step-by-step directions are given for preparation of the system. IMPORTANT FILM GROWTH PARAMETERS: Growth rate of the film is held constant with time by having fixed temperatures for the furnace and evaporator and fixed gas flow rates. TECHNIQUES USED IN FILM EVALUATION.
Descriptors : (*SILICON, EPITAXIAL GROWTH), (*FILMS, EPITAXIAL GROWTH), (*SILICON COMPOUNDS, CHLORIDES), PYROLYSIS, DECOMPOSITION, CRYSTAL DEFECTS, HYDROGEN, ETCHED CRYSTALS, GAS FLOW, SEMICONDUCTORS
Distribution Statement : APPROVED FOR PUBLIC RELEASE