Accession Number : AD0622426

Title :   EXOELECTRON EMISSION FROM THIN FILMS.

Descriptive Note : Master's thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s) : Mathias,Duane M.

Report Date : AUG 1965

Pagination or Media Count : 84

Abstract : Electron trapping in thin aluminum oxide films was investigated through the measurement of electron emission obtained while heating the excited sample through the temperature range of 0 - 420C. Eight aluminum oxide films of different thicknesses were fabricated; six by vacuum evaporation and two by anodization. Results showed that films prepared by vacuum evaporation technique had traps distributed in energy with negligible retrapping. The films prepared by anodizing had two single valued traps of 1.29 ev for the deep traps and .69 ev for the shallow traps. Data indicated that as the film thickness decreases, the number of traps increases. (Author)

Descriptors :   (*FILMS, EMISSIVITY), (*DIELECTRIC FILMS, EMISSIVITY), (*THERMIONIC EMISSION, FILMS), ALUMINUM COMPOUNDS, OXIDES, VAPOR PLATING, EXCITATION, ELECTRODEPOSITION, LUMINESCENCE

Distribution Statement : APPROVED FOR PUBLIC RELEASE