Accession Number : AD0622821
Title : PRODUCTION ENGINEERING MEASURE FOR IMPROVEMENT OF PRODUCTION TECHNIQUES TO INCREASE THE RELIABILITY FOR PNP INTERMEDIATE POWER SILICON PLANAR SWITCHING TRANSISTORS INCLUDING 2N3502.
Descriptive Note : Quarterly progress rept. no. 2, 1 Apr-30 Jun 65,
Corporate Author : FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV
Personal Author(s) : McKeown,W. ; Walker,N. ; Floyd,D. ; Potts,G.
Report Date : 30 JUN 1965
Pagination or Media Count : 35
Abstract : The report describes the primary experiments on the deposition of an SiO2 layer in a horizontal epitaxial reactor and indicates the parameters affecting the uniformity of growth rate along the deposition boat. Work on the semiautomatic line was performed as scheduled. Completion of design was followed by installation of the entire system. A precise correlation between sheet resistance (V/I) and Beta distribution was established and used as a tool in further development. Temperature gradient across a wafer during predeposition operations was found to be the most significant cause of Beta variation. Wafers processed in flat position have shown the least amount of Beta variation.
Descriptors : (*TRANSISTORS, MANUFACTURING), RELIABILITY(ELECTRONICS), SILICON, PROCESSING, OXIDATION, FILMS, CONVEYORS, JIGS, CERAMIC COATINGS, OXIDES
Distribution Statement : APPROVED FOR PUBLIC RELEASE