Accession Number : AD0623324

Title :   SEMICONDUCTOR MICROWAVE AMPLITUDE AND PHASE MODULATOR.

Descriptive Note : Quarterly rept. no. 9, 16 May-15 Aug 65,

Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y

Personal Author(s) : Harrison,R. ; Zucker,J. ; Drago,F. ; Fleri,D. ; Socci,R.

Report Date : 14 SEP 1965

Pagination or Media Count : 20

Abstract : The drive power required to maintain a constant modulation index as the rf carrier power was varied from 0.22 mW to 2.5 mW was experimentally determined for the PIN amplitude modulator. A linear relation was found to exist between the modulation drive and the rf carrier power levels. Effort to stabilize the varactors for the phase modulator by coating the semiconductor surface with a thin dielectric film was continued. Ciba Araldite 6005 epoxy has been found to be effective in enhancing varactor stability. Experiments to encapsulate the varactor in an inert atmosphere with mylar windows or dielectric plugs were initiated. Theoretical analysis indicates that the voltage-dependent resistance of a properly biased PIN diode can be used to achieve phase modulation consistent with the program requirements. (Author)

Descriptors :   (*MODULATORS, SEMICONDUCTOR DEVICES), (*SEMICONDUCTOR DEVICES, MODULATORS), MICROWAVE EQUIPMENT, PHASE MODULATION, AMPLITUDE MODULATION, RADIOFREQUENCY POWER, VARACTOR DIODES, DIELECTRIC FILMS, EPOXY RESINS, ENCAPSULATION, POLYESTER PLASTICS, EPITAXIAL GROWTH, ALUMINUM, SINGLE CRYSTALS, IMPURITIES, GALLIUM, PHASE SHIFT CIRCUITS, STANDING WAVE RATIOS

Distribution Statement : APPROVED FOR PUBLIC RELEASE