Accession Number : AD0623397

Title :   SEMICONDUCTOR RESEARCH.

Descriptive Note : Semiannual rept. for 1 Apr-30 Sep 65,

Corporate Author : PURDUE UNIV LAFAYETTE IND DEPT OF PHYSICS

Personal Author(s) : Fan,H. Y.

Report Date : 30 SEP 1965

Pagination or Media Count : 55

Abstract : Contents: Electroluminescence Spikes in p-type GaSb; Ultrasonic amplification and intrinsic breakdown in InSb; Lithium diffusion and heat treatment of tellurium-doped n-GaSb; Weak field magnetoresistance in n-type aluminum antimonide; Transport measurements at moderate uniaxial and hydrostatic stresses, low temperatures, and large magnetic fields; Effect of stress on the resistivity and hall coefficient of aluminum antimonide; Effect of stress on the electrical properties of n-type GaAs; Effect of pressure on the electrical properties of n-type Silicon containing sulfur; Magnetoresistance of hop conduction in Ge; Excitation spectra of Group-V donors in silicon; Excitation spectra of donors in silicon-germanium alloys; Optical absorption of ZnTe; Electron paramagnetic resonance in electron irradiated germanium; Electron paramagnetic resonance in neutron irradiated silicon; Low temperature specific heat of reduced Ti02 (Rutile); Calorimetric study of vanadium in the superconducting, normal, and mixed states; Polaron in a magnetic field.

Descriptors :   (*SEMICONDUCTORS, ELECTRICAL PROPERTIES), OPTICAL PROPERTIES, DAMAGE, RADIATION EFFECTS, LOW TEMPERATURE, ELECTROLUMINESCENCE, ULTRASONIC PROPERTIES, HEAT TREATMENT, MAGNETIC PROPERTIES, TRANSPORT PROPERTIES, HALL EFFECT, EXCITATION, PARAMAGNETIC RESONANCE, SPECIFIC HEAT, SUPERCONDUCTIVITY

Distribution Statement : APPROVED FOR PUBLIC RELEASE