Accession Number : AD0623403
Title : TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.
Descriptive Note : Quarterly progress rept. no. 4, 1 Apr-30 Jun 65,
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES
Personal Author(s) : Dawson,R. ; Mitchell,M.
Report Date : 30 JUN 1965
Pagination or Media Count : 29
Abstract : The present devices have power gains of 18 to 24db at 100mc operating at VsubD = 6 volts and IsubD =2 ma. Noise figures average about 2.5db. Average gate breakdowns are 85 volts; while the source-drain breakdowns average 20 volts. AGC and cross modulation characteristics are excellent. Noise measurements confirm the theory as predicted by Jordan and Jordan and exhibit a low pass roll off which occurs in the 10 to 100Mc region.
Descriptors : (*TRANSISTOR AMPLIFIERS, VERY HIGH FREQUENCY), OXIDES, METALS, RADIOFREQUENCY POWER, GAIN, NOISE(RADIO), MODULATION, PERFORMANCE(ENGINEERING), TRANSISTORS, FEEDBACK
Distribution Statement : APPROVED FOR PUBLIC RELEASE