Accession Number : AD0623955

Title :   THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.

Descriptive Note : Interim summary rept. no. 2, 1 Jun 64-31 May 65,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Clark,R. Scot ; Orr,Coy D.

Report Date : JUN 1965

Pagination or Media Count : 78

Abstract : Reactively sputtered thin films of tantalum oxide deposited onto thermally oxidized silicon offer a very wide range of sheet resistivities. The application of an external d-c bias to the substrate during sputtering alters sheet resistivity with no change in film thickness. Resistors of 237 ohms/sq changed less than 3% after 1000 hours at +125C and 2.5 watts/sq inch. Sputtering variables were investigated and optimized to improve resistor parameters. Reactively sputtered Ta2O5 dielectric films deposited onto aluminum electrodes offer capacitance values from 0.3 to 3.0 pF/sq. mil and d-c breakdown voltages of 60 to 6 volts, respectively. Capacitors tested for 1000 hours at +125C and 60% of destructive breakdown voltage changed less than 2% from initial capacitance. Substrate biasing during deposition can be used to improve the dielectric strength. Sputtering variables were investigated and optimized to improve capacitor parameters. A 455 kc amplifier is being used as a test vehicle for fabrication of a hybrid/monolithic circuit. The substrate is silicon with diffused transistors and thin film resistors and capacitors are deposited on the substrate. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, PREPARATION), (*FILMS, ELECTROCHEMISTRY), (*SPUTTERING, INTEGRATED CIRCUITS), (*TANTALUM COMPOUNDS, SPUTTERING), OXIDES, DEPOSITION, ELECTRICAL RESISTANCE, RESISTORS, DIELECTRIC FILMS, CAPACITORS, RADIOFREQUENCY AMPLIFIERS, SILICON, TRANSISTORS, MICROELECTRONICS, INTERMEDIATE FREQUENCIES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE