Accession Number : AD0624251
Title : RESEARCH INVESTIGATIONS IN THE PHYSICAL CHEMISTRY AND METALLURGY OF SEMICONDUCTING MATERIALS.
Descriptive Note : Quarterly rept. no. 3, 15 Nov 60-15 Feb 61,
Corporate Author : EAGLE-PICHER RESEARCH LABS MIAMI OKLA CHEMICAL AND METALS DIV
Personal Author(s) : Bean,K. E. ; Starks,R. J.
Report Date : 15 FEB 1961
Pagination or Media Count : 28
Abstract : Using commercial grade boron with relatively high impurity concentration and a carbon concentration as high as .8 percent, boron can be prepared with no spectrographically detectable impurities, and a carbon concentration of less than 60 parts per million. Using a crucible-free method a Czochralski crystal of elemental boron was grown which had a monocrystalline structure. These crystals fractured uniformly at an angle 19 degrees to the growth axis. The bar which was 4 inches in length and 5/16 inch in diamter was grown at a rate of one inch per hour under a positive argon pressure equal to one inch of mercury. Growth of boron films on quartz, boron nitride and alumina substrates have been accomplished. Quartz, as a substrate, was not satisfactory. The films on boron nitride were of high n-type conductivity. The ionization energy was .35 ev as compared to a value of .6 ev for high purity crystalline boron. It was determined that these films were very uniformly doped with silicon, and the source of the silicon was the boron nitride. The electrical properties of the film deposited on A1203 were not determined.
Descriptors : (*SEMICONDUCTORS, MATERIALS), (*BORON, SINGLE CRYSTALS), (*SEMICONDUCTING FILMS, BORON, SUBSTRATES, CRYSTAL GROWTH, DOPING, SILICON, QUARTZ, BORON COMPOUNDS, NITRIDES, ALUMINUM COMPOUNDS, OXIDES
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE