Accession Number : AD0624562

Title :   HIGH-MOBILITY LOW-MELTING-POINT GROUP III-V COMPOUND SEMICONDUCTORS.

Descriptive Note : Final technical rept.,

Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO

Personal Author(s) : Beer,A. C. ; Baxter,R. D. ; Reid,F. J.

Report Date : 31 OCT 1965

Pagination or Media Count : 21

Abstract : Contents: crystal growth of GaSb from non-stoichiometric melts, properties of improved p- and n- type GaSb, solubility, and electrical behavior of Li in GaSb, galvanomagnetic effects in InSb.

Descriptors :   (*SEMICONDUCTORS, ANTIMONY ALLOYS), (*GALLIUM ALLOYS, ANTIMONY ALLOYS), (*INDIUM ALLOYS, ANTIMONY ALLOYS), INTERMETALLIC COMPOUNDS, MELTING, CRYSTAL GROWTH, ELECTRICAL PROPERTIES, SOLUBILITY, LITHIUM, MAGNETIC PROPERTIES, DOPING

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE