Accession Number : AD0624935
Title : GAAS INJECTION LASER INVESTIGATION.
Descriptive Note : Technical progress rept. Dec 63-May 64,
Corporate Author : NAVAL ORDNANCE TEST STATION CHINA LAKE CALIF
Personal Author(s) : McCauley,Donald G.
Report Date : OCT 1965
Pagination or Media Count : 60
Abstract : This is one in a series of reports to be published on laser technique and application studies. It documents an investigation in which coherent light emission was obtained from a General-Electric Company GaAs p-n junction injection laser. With current densities in excess of 2,400 amp/sq cm, increased external quantum efficiency, spectral line narrowing, and a high degree of primary source coherence of the radiation were shown. The spectral distribution, which is highly dependent on the current-induced changes in the junction temperature during a single injection pulse, was recorded photographically using a new application of the pulsed-intensity oscilloscope technique. Infrared sheet film was exposed to the radiation below, near, and far above threshold resulting in no, a few, and a great many interference fringes, respectively. There is up to 50% error in the quantitative data presented here, which is not unusual for injection laser investigations; however, the qualitative trends toward spectral line narrowing and high external quantum efficiency support the argument for the optical pumping of neodymium glass and calcium fluoride lasers. (Author)
Descriptors : (*LASERS, SEMICONDUCTORS), (*SEMICONDUCTORS, LASERS), SOLID STATE PHYSICS, SEMICONDUCTOR DIODES, GALLIUM COMPOUNDS, ARSENIDES, INJECTION, OPTICAL PUMPING, LIGHT, OPTICS
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE