Accession Number : AD0625533

Title :   EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (SURFACE EFFECTS).

Descriptive Note : Quarterly rept. no. 3, 15 Jun-15 Sep 65,

Corporate Author : HUGHES AIRCRAFT CO NEWPORT BEACH CA MICROELECTRONICS LAB

Personal Author(s) : Gallagher, Brian D. ; Honnold, Vincent R.

Report Date : DEC 1965

Pagination or Media Count : 29

Abstract : Concluding experimental irradiation data were taken on four groups of Silicon bars, each containing five samples ranging in thickness between .003 in. and .012 in. The four groups duplicated surface conditions of mechanical polish, etch, sandblast, and oxide processed into the transistor lots tested in the first two quarters. After irradiation, the effective lifetime of each bar was determined. Surface recombination velocity for each surface treatment was then calculated by plotting 1/effective minority carrier lifetime as a function of 1/c-sq. where c is the bar thickness. The development of the equations for induced photocurrent for the planar configuration was expanded. (Author)

Descriptors :   *TRANSISTORS, *SURFACE PROPERTIES, RADIATION DAMAGE, SEMICONDUCTORS, TRANSIENTS, SILICON, CHARGE CARRIERS, PHOTOCONDUCTIVITY.

Subject Categories : Solid State Physics
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE