Accession Number : AD0626195

Title :   MILLIMETER-WAVE GENERATION TECHNIQUES.

Descriptive Note : Rept. for 1 Apr 64-1 May 65,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s) : Ramachandran,T. B. ; Gilden,M. ; Pergola,J.

Report Date : DEC 1965

Pagination or Media Count : 124

Abstract : Research was performed on two programs; Task I, millimeter-wave generation using the electro-optical approach; Task II, microwave generation using bulk properties of gallium arsenide by direct conversion from d-c or pulsed sources. Using a PIN structure of the GaAs(x)P(1-x) - GaAs material system, a photodetector has been fabricated that is capable of detecting beat frequencies from a gallium arsenide laser of at least 40 Gc. This heterojunction structure has an 11% phosphide P+ layer for the light incident surface and is compatible with gallium arsenide light sources. Also presented is the investigation into the inefficiency of the 80% phosphide heterojunction structure. The generation of microwave energy (Task II) using bulk properties of gallium arsenide (currently called the 'Gunn effect') is discussed in terms of both large-and-small-signal theory. The large-signal theory involves the concept of moving domains resulting from an electric field controlled negative resistivity. The small-signal theory involves space-charge wave propagation which results in negative resistance effects at the sample terminals. Qualitatively, the effect of carrier transit-time, terminal condition and doping level are given. (Author)

Descriptors :   (*MILLIMETER WAVES, MICROWAVE OSCILLATORS), (*MICROWAVE OSCILLATORS, SEMICONDUCTOR DEVICES), (*SEMICONDUCTOR DEVICES, MICROWAVE OSCILLATORS), RADIOFREQUENCY GENERATORS, PHOTOELECTRIC CELLS(SEMICONDUCTOR), GALLIUM ALLOYS, ARSENIC ALLOYS, PHOSPHIDES, THEORY, LASERS, SEMICONDUCTORS, SOLID STATE PHYSICS

Subject Categories : Electrical and Electronic Equipment
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE