Accession Number : AD0626530

Title :   RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note : Quarterly rept. no. 1, 1 Jan-31 Mar 62,

Corporate Author : CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Personal Author(s) : Shiozawa,Lebo R. ; Barrett,J. L. ; Chotkevys,G. P. ; Devlin,S. S. ; Jost,J. M.

Report Date : 23 APR 1962

Pagination or Media Count : 51

Abstract : First quarter progress on the purification, crystal growth, and properties of CdS, CdSe, and ZnTe are summarized. Difficulties were encountered when zone refining of CdSe was attempted. The advantages of using shaped tubes for vapor-phase growth of crystals are described. The vapor pressure of CdSe is discussed and compared with experimental data. The diffusion of Cd in CdSe was analyzed by conductivity measurements; and the data are shown to agree closely with simple diffusion theory. A diffusion constant of 5.41 x 10-1 to the minus 10th power sq cm/sec is obtained for a crystal temperature of 1000C. The temperature dependence of the carrier mobility shows that the dominant lattice scattering in CdSe and ZnTe is due to optical modes as in CdS. The mobility of the carriers in n-type CdSe and p-type ZnTe is 5300 sq cm/volt sec and 2550 sq cm/volt sec respectively at 79K in the particular crystals measured. (Author)

Descriptors :   (*SEMICONDUCTORS, SOLID STATE PHYSICS), PURIFICATION, CRYSTAL GROWTH, CADMIUM COMPOUNDS, SULFIDES, SELENIUM ALLOYS, CADMIUM ALLOYS, ZINC ALLOYS, TELLURIUM ALLOYS, INTERMETALLIC COMPOUNDS, ZONE MELTING, VAPOR PRESSURE, DIFFUSION, ELECTRICAL PROPERTIES, CRYSTAL GROWTH

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE