Accession Number : AD0627849

Title :   THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.

Descriptive Note : Quarterly progress rept. no. 7, 1 Jun-31 Aug 65,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Clark,R. Scot ; Gaze,Mike

Report Date : OCT 1965

Pagination or Media Count : 61

Abstract : Basic investigations in the residual gas contamination during sputtering and oxidation mechanism have yielded information that contributes to increased process control. Also, the oxidation experiments depict a structure that can be modified to aid in temperature coefficient of resistance control. A process control investigation for fabricating 1000 ohms/sq resistors and >0.35 pF/sq mil capacitors on the same silicon substrate has been completed. The results show the yield for the 1000 ohms/sq plus or minus 20% tolerance resistive film is 62% and for both the resistive and capactive films, the yield is 38%. An etch problem on the 455 KHz amplifier has delayed fabrication of this circuit. The problem has been solved by using a KMER mask to deposit the Ta2O5 dielectric through. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, PREPARATION), (*FILMS, SPUTTERING), (*SPUTTERING, INTEGRATED CIRCUITS), (*TANTALUM COMPOUNDS, SPUTTERING), OXIDES, SILICON, ELECTRICAL RESISTANCE, RESISTORS, CAPACITORS, DIELECTRIC FILMS, ELECTRIC CONNECTORS, ELECTROCHEMISTRY, ALUMINUM, VAPOR PLATING, MICROELECTRONICS

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE