Accession Number : AD0628770

Title :   NEW SOLID-STATE DEVICE CONCEPTS.

Descriptive Note : Scientific rept.,

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Aven,M. ; Hall,R. N. ; Rosenberg,L. M. ; Woodbury,H. H.

Report Date : DEC 1965

Pagination or Media Count : 42

Abstract : Data on the diffusion of Se into CdS as functions of time and sulfur pressure between 900 and 1000C show that the diffusion profiles are independent of predoping with Se, preannealing the crystals, surface preparation, and In doping. The diffusion is not simple, and the data are being analyzed to determine a suitable model. A successful new technique for growing ZnSe sub x,Te sub (1-x) crystals is described, and data on the properties of junctions prepared from a new composition corresponding to x = 0.14 are given. Light intensity vs current and temperature are given and discussed in terms of a proposed energy level diagram. Thin-film GaAs switching diodes have been constructed by evaporation of Ga and As onto Mo substrates. The characteristics resemble those described by Mizushima except that they are asymmetrical with respect to voltage. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, MATERIALS), (*LASERS, SEMICONDUCTOR DEVICES), SEMICONDUCTORS, CADMIUM COMPOUNDS, SULFIDES, DOPING, SELENIUM, DIFFUSION, TRACER STUDIES, ZINC ALLOYS, SELENIUM ALLOYS, TELLURIUM ALLOYS, TRANSPORT PROPERTIES, ELECTROLUMINESCENCE, SEMICONDUCTING FILMS, GALLIUM ALLOYS, ARSENIC ALLOYS, OPTICAL PROPERTIES, ELECTRONIC SWITCHING, SEMICONDUCTOR DIODES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE