Accession Number : AD0628858

Title :   HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.

Descriptive Note : Quarterly interim development rept. no. 3, 27 Nov 65-27 Feb 66,

Corporate Author : CHATHAM ELECTRONICS DIV TUNG-SOL ELECTRIC INC LIVINGSTON N J

Personal Author(s) : Ake,Nelson E.

Report Date : 27 FEB 1966

Pagination or Media Count : 17

Abstract : A planar silicon dioxide passivated diode has been designed and fabricated for the EBM tube. The typical reverse electrical characteristics of the diode are a reverse voltage breakdown of 700-1000 volts with a maximum reverse leakage current of 3 micro amps at 600 volts reverse bias. The starting material is 'N' float zone bulk silicon with a resistivity in the range 70-125 ohms-cm. Some difficulty was encountered in making a diode with a reverse voltage breakdown of 700 volts with starting material below approximately 125 ohms-cm. However, it has been demonstrated that diodes with reverse voltage breakdowns of greater than 700 volts can be made with starting material of 60 ohms-cm. Lower starting resistivity material provides a lower parasitic resistance in the device during the conduction cycle. It has been demonstrated that these diodes will remain good for extended periods under environmental conditions simulating the inside of a vacuum tube. (Author)

Descriptors :   (*SOLID STATE PHYSICS, POWER), (*POWER AMPLIFIERS, SEMICONDUCTOR DIODES), (*SEMICONDUCTOR DIODES, POWER AMPLIFIERS), SEMICONDUCTOR DEVICES, PERFORMANCE(ENGINEERING), LEAKAGE(ELECTRICAL), ELECTRICAL RESISTANCE, SILICON, DIOXIDES, PENETRATION, ELECTRON BEAMS, VACUUM, PULSE AMPLIFIERS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE