Accession Number : AD0629688
Title : JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,
Corporate Author : ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Holonyak,N. ,Jr. ; Sirkis,M. D. ; Nuese,C. J. ; Wolfe,C. M.
Report Date : JUN 1965
Pagination or Media Count : 47
Abstract : The report is concerned with the preparation, growth, dislocation structure, and electrical properties of single-crystal GaAsP, both filamentary and ingot size, produced by halide vapor transport. The vapor-liquid -solid (VLS) mechanism is shown to play a dominant role in filamentary growth, while Frank spiral growth patterns are often observed on the growing interface of bulk material. Single-crystal GaAsP ingots also grow by nucleation on low-index natural faces, and the possibility of a VLS mechanism being operative in the growth of bulk material is considered. Together with the peculiarities of growth, the phenomenon of crystal habit modification by impurities is observed in the growth of GaAsP for device applications. Since defects in GaAsP may be expected to affect its properties as a semiconductor, the dislocation structure in well-annealed, as-grown ingots is examined and identified by decoration and etching. Dislocation configurations, such as low-angle tilt boundaries, are evaluated and the crystallography of the commonly observed dislocations in bulk material is determined. Finally, the quality and potential of vapor-grown GaAsP as a semiconductor device material are discussed from the standpoint of dislocation structure, measured mobility and carrier densities, and present limitations of the growth process.
Descriptors : (*SEMICONDUCTORS, ELECTRICAL PROPERTIES), (*SINGLE CRYSTALS, SEMICONDUCTORS), GALLIUM COMPOUNDS, ARSENIC COMPOUNDS, PHOSPHORUS COMPOUNDS, PREPARATION, CRYSTAL GROWTH, CRYSTAL DEFECTS, IMPURITIES, DOPING, WHISKERS(CRYSTALS), LASERS
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE